Abstract -Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature extraction and prediction of power semiconductor devices. In this paper, the turn-off delay time is explored as an indicator of a TSEP to extract the junction temperature from high power insulated gate bipolar transistor (IGBT) modules. The parasitic inductor L eE between the Kelvin and power emitter terminals of an IGBT module is utilized to extract the turn-off delay time.
Furthermore, the monotonic dependence between the junction temperature and turn-off delay time is investigated. The beginning and end point of the turn-off delay time can be determined by monitoring the induced voltage v eE across the inductor L eE . A dynamic switching characteristic test platform for high power IGBT modules is used to experimentally verify the theoretical analysis. The experimental results show that the dependency between IGBT junction temperature and turn-off delay time is near linear. It is established that the turn-off delay time is a viable TSEP with good linearity, fixed sensitivity and offers non-destruction on-line IGBT junction temperature extraction.Index Terms -Thermo-sensitive electrical parameter, high power IGBTs, on-line junction temperature extraction, turn-off delay time.
I.0885-8993 (c) . His research interests include high power devices, advanced power converters and operation optimization for renewable energy based power systems. Dr. Li has published more than 100 peer-reviewed technical papers and holds over 30 issued/pending patents.Due to his excellent teaching and research contributions, Dr.